Electrical Properties Characterization of AlGaN/GaN MODFET
نویسندگان
چکیده
The electrical properties characterization of AlGaN/GaN based Modulation Doped Field Effect Transistor (MODFET) is reported. Threshold voltage Vth=-3.87 V, maximum saturation current Idss=122.748 mA, gate-source capacitance at zero gate voltage and also maximum gate-source capacitance= 0.161753 pF/μm, gate-source capacitance=0.157233 pF/μm at Id=0.3Idss, trans-conductance (gm) = 31.3806 mS/mm at zero gate voltage, maximum trans-conductance (gmax) = 31.765 mS/mm, trans-conductance(gm) =30.351 mS/mm at Id=0.3Idss has been achieved. The dependence of Two-Dimensional Electron Gas (2-DEG) density at the interface on Al mole fraction and thickness of AlGaN barrier layer is also presented.
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